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| Advance Product Information May 3, 2000 18 - 20 GHz 5-Bit Phase Shifter TGC1439A-EPU Key Features and Performance * * * * * * 0.5um pHEMT Technology 18-20 GHz Frequency Range 3 Typical RMS Phase Shift Error -5 dB Typical Insertion Loss Control Voltage: -2.5 V to -5.0 V Compact 1.27 mm2 Die Area Phased Arrays Satellite Communication Systems TGC1439A Typical RF Performance (Fixtured) The TriQuint TGC1439A-EPU is a 5-Bit Digital Phase Shifter MMIC design using TriQuint's proven 0.5 m Power pHEMT process to support a variety of K-Band phased array applications including satellite communication systems. The 5-bit design utilizes a compact topology that achieves a 1.27 mm2 die area, high performance and good tolerance to control voltage variation The TGC1439A provides a 5-Bit digital phase shift function with a nominal -5 dB insertion loss and 3 RMS phase shift error over a bandwidth of 18-20 GHz. The TGC1439A requires a minimum of off-chip components and operates with a -5.0 V to -2.5 V control voltage range. Each device is RF tested onwafer to ensure performance compliance. The device is available in chip form. Primary Applications * * 12 9 6 3 0 -3 -6 -9 -12 Phase Shift Error (deg) 18 GHz 19 GHz 20 GHz 0 4 8 12 16 20 24 28 Phase State TGC1439A Typical RF Performance (Fixtured) TGC1439A Typical RF Performance (Fixtured) -3 -4 -5 -6 -7 -8 -9 -10 -11 -12 -13 17 Insertion Loss Phase Error 40 35 30 25 20 15 10 5 0 -5 -10 21 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 17 18 19 Frequency (GHz) 20 Phase Shift Error (deg) Input Output Insertion Loss (dB) 18 19 20 Frequency (GHz) Return Loss (dB) 21 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com Advance Product Information May 3, 2000 Electrical Characteristics RECOMMENDED MAXIMUM RATINGS Symbol VI+ PD P IN T CH TM T STG 1/ 2/ Parameter Control Voltage Control Current Power Dissipation Input Continuous Wave Power Operating Channel Temperature Mounting Temperature (30 seconds) Storage Temperature Value -8 V 1 mA 0.1 W 20 dBm 150 C 320 C -65 C to 150 C TGC1439A Notes 3/ 1/, 2/ These ratings apply to each individual FET Junction operating temperature will directly affect the device mean time to failure (MTTF). For maximum life it is recommended that junction temperatures be maintained at the lowest possible levels. Total current for the entire MMIC ON-WAFER RF PROBE CHARACTERISTICS (TA = 25 C 5C) Symbol Parameter IL IRL ORL PS Test Condition Vctnl=0V / -2.5V Insertion Loss F = 18, 19, 20 GHz States 0 and 31 Input Return F = 18, 19, 20 GHz Loss States 0 and 31 Output Return F = 18, 19, 20 GHz Loss States 0 and 31 Phase Shift F = 18, 19, 20 GHz State 31 Limit Min Nom Max -5.5 -4.6 -4.0 -16 -14 342 344 -11 -11 350 Units dB dB dB deg 3/ 1200 Number of Devices 1000 800 600 400 200 0 -5.0 -4.9 -4.8 -4.7 -4.6 -4.5 -4.4 -4.3 -4.2 -4.1 -4.0 19 GHz Reference State Insertion Loss (dB) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 2 TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com Advance Product Information May 3, 2000 1400 TGC1439A Number of Devices 1200 1000 800 600 400 200 0 -5.0 -4.9 -4.8 -4.7 -4.6 -4.5 -4.4 -4.3 -4.2 -4.1 -4.0 19 GHz State 31 Insertion Loss (dB) 800 700 Number of Devices 600 500 400 300 200 100 0 340 341 342 343 344 345 346 347 348 349 350 19 GHz State 31 Phase Shift (deg) Typical Fixtured Performance Over the 18-20 GHz Band Parameter Mean Insertion Loss Mean Loss Flatness Peak Amplitude Error RMS Amplitude Error Peak Phase Shift Error RMS Phase Shift Error Loss Temp. Variation Ave Input Return Loss Ave Output Return Loss Unit dB dB dBpp dB deg deg dB/C dB dB -5.0 V -4.9 0.3 1.2 0.25 -3 / +7 3.0 -0.0048 -16 -15 -2.5 V -5.0 0.6 1.3 0.30 -3 / +7 2.7 -0.0052 -15 -15 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 3 TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com Advance Product Information May 3, 2000 TGC1439A Mechanical Characteristics 1.102 1.234 0.412 0.542 1.693 0.750 4 6 8 10 0.354 1 35 79 1.020 1.150 2 11 1.490 0.354 0.000 0.000 0.639 0.769 Units: millimeters Thickness: 0.1016 Chip size tolerance: +/- 0.0508 Vcntl = -5.0 V to -2.5 V Passive device, RF IN and RF OUT designators for reference only Bond Pad #1 Bond Pad #2 Bond Pad #3 Bond Pad #4 Bond Pad #5 Bond Pad #6 Bond Pad #7 Bond Pad #8 Bond Pad #9 Bond Pad #10 Bond Pad #11 (RF IN) (RF OUT) (180 Bit ON: V= Vcntl) (180 Bit ON: V= 0.0V) (90 Bit ON: V= Vcntl) (90 Bit ON: V= 0.0V) (45 Bit ON: V= Vcntl) (45 Bit ON: V= 0.0V) (22.5 Bit ON: V= Vcntl) (22.5 Bit ON: V= 0.0V) (11.25 Bit ON: V= Vcntl) 0.100 x 0.150 0.100 x 0.150 0.100 x 0.100 0.100 x 0.100 0.100 x 0.100 0.100 x 0.100 0.100 x 0.100 0.100 x 0.100 0.100 x 0.100 0.100 x 0.100 0.100 x 0.100 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 4 TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com Advance Product Information May 3, 2000 TGC1439A Recommend 500 series resistance on the control lines Chip Assembly and Bonding Diagram Reflow process assembly notes: *= *= *= *= *= AuSn (80/20) solder with limited exposure to temperatures at or above 300C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere Component placement and adhesive attachment assembly notes: *= *= *= *= *= *= *= vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical Interconnect process assembly notes: *= *= *= *= *= thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200C GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 5 |
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